PART |
Description |
Maker |
HCF4000 HCF4000B HCF4001 HCF4001B HCF4002 HCF4002B |
NOR GATE (289.19 k) TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,6A I(D),TO-3 RoHS Compliant: Yes T-PNP-SI-AF PO- .75W T-NPN- SI-PO & SW-PD 40 W 或非 MOSFET-PWR N-CH HI SPEED 或非 MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:10.5A; On-Resistance, Rds(on):0.3ohm; Package/Case:3-TO-220; Continuous Drain Current - 100 Deg C:7.5A; Continuous Drain Current - 25 Deg C:10.5A 或非 MOSFET-PWR 800V 4A 或非 NOR GATE 或非 MOSFET-PWR 500V 8A
|
ST Microelectronics SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
|
IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State GE Solid State
|
SP8855 SP8855E |
2.8GHz Parallel Load Professional Synthesiser MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):10mohm; Rds(on) Test
|
Mitel Semiconductor MITEL[Mitel Networks Corporation]
|
2SK1703 |
Drain Current ?ID= 5A@ TC=25C
|
Inchange Semiconductor ...
|
2SK753 |
Drain Current ?ID=5A@ TC=25C
|
Inchange Semiconductor ...
|
2SK934 |
Drain Current ?ID=8A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1460 |
Drain Current ?ID=3.5A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1224 |
Drain Current ?ID=4A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1463 |
Drain Current ?ID=4.5A@ TC=25C
|
Inchange Semiconductor ...
|
1N65 |
Drain Current ID= 1.2A@ TC=25C
|
Inchange Semiconductor ...
|
2N80 |
Drain Current ID= 2.4A@ TC=25C
|
Inchange Semiconductor ...
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